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"kuo hc"的相关文件
显示项目 51-100 / 216 (共5页)
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| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
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Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:22Z |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
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Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
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Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:11Z |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
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Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
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Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
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Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
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Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:36:25Z |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
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Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
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Cho, AT; Shieh, JM; Shieh, J; Lai, YF; Dai, BT; Pan, FM; Kuo, HC; Lin, YC; Chao, KJ; Liu, PH |
| 國立交通大學 |
2014-12-08T15:27:54Z |
REDUCED COMPLEXITY SEQUENTIAL-DECODING SCHEME FOR THE MULTIPLE TRELLIS-CODED MODULATION (MTCM)
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KUO, HC; WEI, CH |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
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Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
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Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
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Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
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Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
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Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:40Z |
Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals
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Lin, CJ; Yu, KC; Kuo, HC; Ou-Yang, MJ; Lin, GR |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
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Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
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Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O
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Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate
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Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
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Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:37Z |
Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB
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Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:34Z |
Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
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Lin, CK; Lin, GR; Lin, CJ; Kuo, HC; Chen, CY |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
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Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
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Lin, CK; Kuo, HC; Liao, YS; Lin, GR |
| 國立交通大學 |
2014-12-08T15:25:14Z |
10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
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Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M |
| 國立交通大學 |
2014-12-08T15:25:14Z |
Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence
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Chen, CY; Lin, CJ; Kuo, HC; Lin, GR; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG |
| 國立交通大學 |
2014-12-08T15:25:13Z |
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:09Z |
Effects of N2O fluence on the PECVD-grown Si-rich SiOx with buried Si nanocrystals
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Lin, CJ; Kuo, HC; Chen, CY; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG; Lin, GR |
| 國立交通大學 |
2014-12-08T15:25:09Z |
CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2
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Lin, CJ; Chueh, YL; Chou, LJ; Kuo, HC; Lin, GR |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
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Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
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Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:28Z |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
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Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:24Z |
Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
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Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
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Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
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Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
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Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:14Z |
Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
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Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
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Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
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Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
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Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:58Z |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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Lin, GR; Kuo, HC; Lin, CK; Feng, M |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
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Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
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Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
显示项目 51-100 / 216 (共5页)
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